SIMOX
基本解释
- 注氧隔离
英汉例句
- Based on the SIMOX SOI wafer,the SOI structure pressure gauge chip was designed,and the gauge chips were manufactured with MEMS techniques.
在 SIMOX 技术 SOI 晶圆的基础上,设计了压力敏感芯片结构,并基于 MEMS 工艺制作了芯片。 - Abstract Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
摘要 研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。 - Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment.
传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。 - Effect of Two Step Annealing on Formation of SIMOX Structure
两步退火对SIMOX结构形成的影响 - Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMS
SIMOX材料顶层硅膜中残余氧的行为