lpcvd

基本解释

Deposition of Carbon Nanotubes Film by LPCVD and Related Field Emission Property[J].
引用该论文陈婷;孙卓;郭平生;王莉莉;黄素梅.
R. A. Levy, M. L. Green and P. K. Gallager, “Characterization of LPCVD Aluminum for VLSI process,” J. Electrochem. Soc., 1984, p.2175.
杨正杰，张鼎张，郑晃忠，“铜金属与低介电常数材料与制程”，毫微米通讯，第七捲，第四期，2000
This result offers a convenient and effective solution for improving thickness variation in LPCVD furnace oxide deposition processes.
这一结果为低压化学汽相沉积得到的隧穿氧化薄膜的平坦化提供了新思路。
This paper introduced the preparation technologies and properties of CVD for Si_3N_4 films and the process of low pressure chemical vapor deposition(LPCVD).
简要介绍了Si3N4膜的制备方法及CVD法制备的Si3N4薄膜的特性;详细介绍了低压化学气相淀积(LPCVD)氮化硅的工艺.
Si Quantum dots(Ti doped) have been formed by self-assembled growth on SiO_2 surfaces using the low pressure chemical vapor deposition(LPCVD) with two step annealing.
通过自组装生长并结合两步退火处理,在SiO2表面得到了Ti掺杂的Si纳米晶粒量子点。