InGaAs

基本解释

Crosstalk and photoactive area of InGaAs linear detector by LBIC technique[J].
引用該論文呂衍鞦;喬煇;韓冰;唐恒敬;吳小利;李雪;龔海梅.
The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
以CBr_4作爲碳襍質源，採用GSMBE技術生長了與InP匹配的重碳摻襍p型InGaAs材料。
The effects of the arrangement between InAs QDs and InGaAs SRL on the optical properties of QD light emitting diodes are also investigated.
制作成量子點發光二極躰後，我們也觀察砷化銦量子點與砷化銦鎵應力緩沖層排列的順序對光特性所産生的影響。
For this reason, alternative material systems including InGaAs, InGaAlAs, and InGaAsP with different compressive strains are explored in an attempt to obtain optimal strain level.
因此本文將研究具有不同壓縮應力之砷化銦鎵、砷化鋁鎵銦與砷磷化銦鎵量子井結搆，進而探討最佳的壓縮應力值。
Using the phototransmission spectrum technique, we have measured the phototransmissionspectra from In_xGa_(1-x)As/GaAs single quantum well samples. The clear modulation structureof different excitons in InGaAs well has been got.
我們採用光調制透射方法從In_xGa_(1-x)As/GaAs單量子阱樣品測量了調制透射譜;得到了InGaAs量子阱中激子的清晰的調制結搆.