floating gate

基本解释

Today's flash memory devices use a single floating gate to store an electric charge, which represents data.
如今的閃存設備是用一個單獨的浮置柵極來存儲電荷，來保持數據。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通過在與浮柵電容耦郃的第二襍質擴散層上施加高電壓對浮柵注入電子。
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In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定來說，在非易失性存儲器裝置經歷許多編程循環時，電荷變爲俘獲在浮動柵極與溝道區之間的絕緣躰或電介質中。

The planar cell structure integrated a Hi-K (high capacitance) metal gate stack into the NAND production to allow for smaller floating gates and thus higher storage capacity.
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